GAAS/GA1-XALXAS AND GA1-XALXAS/GAAS HETEROINTERFACES GROWN BY MOLECULAR-BEAM EPITAXY

被引：13

作者：

ALEXANDRE, F ^{[1
]}

LIEVIN, JL ^{[1
]}

MEYNADIER, MH ^{[1
]}

DELALANDE, C ^{[1
]}

机构：

[1] ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75231 PARIS 05,FRANCE

来源：

关键词：

D O I：

10.1016/0039-6028(86)90875-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：454 / 461

页数：8

共 11 条

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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 950 - 955
[3] DRUMMOND TJ, 1982, J APPL PHYS, V53, P3321
[4] GOSSARD AC, 1982, 2ND INT S MBE CLEAN
[5] RHEED STUDIES OF HETEROJUNCTION AND QUANTUM-WELL FORMATION DURING MBE GROWTH - FROM MULTIPLE-SCATTERING TO BAND OFFSETS
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[J]. SURFACE SCIENCE, 1986, 168 (1-3) : 423 - 438
[6] EXTRINSIC LAYER AT ALXGA1-XAS-GAAS INTERFACES
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[J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 374 - 376
[7] MORKOC H, 1982, J ELECTROCHEM SOC, V129, P825
[8] SELF-MASKING SELECTIVE EPITAXY BY MOLECULAR-BEAM METHOD
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[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 940 - 942
[9] IMPURITY TRAPPING, INTERFACE STRUCTURE, AND LUMINESCENCE OF GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY
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MILLER, RC
GOSSARD, AC
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[J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 217 - 219
[10] MORPHOLOGY OF GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
STALL, RA
ZILKO, J
SWAMINATHAN, V
SCHUMAKER, N
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 524 - 527