HYDROGEN PASSIVATION OF SHALLOW ACCEPTORS IN SILICON

[1] MICROSCOPIC MECHANISM OF HYDROGEN PASSIVATION OF ACCEPTOR SHALLOW LEVELS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (09) : 980 - 982

[2] THE ISOTOPE STUDY OF THE SI-H ABSORPTION PEAKS IN THE FZ-SI GROWN IN HYDROGEN ATMOSPHERE [J]. SOLID STATE COMMUNICATIONS, 1985, 56 (03) : 277 - 281

[3] INFRARED STUDY OF LOCALIZED VIBRATIONS IN SILICON DUE TO BORON AND LITHIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (04) : 671 - +

[4] HYDROGEN PASSIVATION OF SHALLOW ACCEPTORS IN C-SI - AN ABINITIO APPROACH [J]. PHYSICAL REVIEW B, 1987, 36 (11): : 6228 - 6230

[5] HYDROGEN IN CRYSTALLINE SILICON - A DEEP DONOR [J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 918 - 920

[6] STUDY OF THE LOCALIZED VIBRATIONS OF BORON IN HEAVILY DOPED SI [J]. PHYSICAL REVIEW B, 1980, 22 (10): : 4825 - 4833

[7] VIBRATIONAL-MODE THEORY OF ACCEPTOR-HYDROGEN COMPLEXES IN SILICON [J]. PHYSICAL REVIEW B, 1988, 37 (06): : 3113 - 3116

[8] HYDROGEN-ACCEPTOR PAIRS IN SILICON - PAIRING EFFECT ON THE HYDROGEN VIBRATIONAL FREQUENCY [J]. PHYSICAL REVIEW B, 1985, 31 (10): : 6861 - 6864

[9] DU YC, 1985, SOLID STATE COMMUN, V55, P501, DOI 10.1016/0038-1098(85)90321-7

[10] EQUILIBRIUM SITES AND ELECTRONIC-STRUCTURE OF INTERSTITIAL HYDROGEN IN SI [J]. PHYSICAL REVIEW B, 1987, 36 (17): : 9122 - 9127

[1] MICROSCOPIC MECHANISM OF HYDROGEN PASSIVATION OF ACCEPTOR SHALLOW LEVELS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (09) : 980 - 982

[2] THE ISOTOPE STUDY OF THE SI-H ABSORPTION PEAKS IN THE FZ-SI GROWN IN HYDROGEN ATMOSPHERE [J]. SOLID STATE COMMUNICATIONS, 1985, 56 (03) : 277 - 281

[3] INFRARED STUDY OF LOCALIZED VIBRATIONS IN SILICON DUE TO BORON AND LITHIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (04) : 671 - +

[4] HYDROGEN PASSIVATION OF SHALLOW ACCEPTORS IN C-SI - AN ABINITIO APPROACH [J]. PHYSICAL REVIEW B, 1987, 36 (11): : 6228 - 6230

[5] HYDROGEN IN CRYSTALLINE SILICON - A DEEP DONOR [J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 918 - 920

[6] STUDY OF THE LOCALIZED VIBRATIONS OF BORON IN HEAVILY DOPED SI [J]. PHYSICAL REVIEW B, 1980, 22 (10): : 4825 - 4833

[7] VIBRATIONAL-MODE THEORY OF ACCEPTOR-HYDROGEN COMPLEXES IN SILICON [J]. PHYSICAL REVIEW B, 1988, 37 (06): : 3113 - 3116

[8] HYDROGEN-ACCEPTOR PAIRS IN SILICON - PAIRING EFFECT ON THE HYDROGEN VIBRATIONAL FREQUENCY [J]. PHYSICAL REVIEW B, 1985, 31 (10): : 6861 - 6864

[9] DU YC, 1985, SOLID STATE COMMUN, V55, P501, DOI 10.1016/0038-1098(85)90321-7

[10] EQUILIBRIUM SITES AND ELECTRONIC-STRUCTURE OF INTERSTITIAL HYDROGEN IN SI [J]. PHYSICAL REVIEW B, 1987, 36 (17): : 9122 - 9127