HYDROGEN PASSIVATION OF SHALLOW ACCEPTORS IN SILICON

[21] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (03): : 153 - 195

[22] DEACTIVATION OF THE BORON ACCEPTOR IN SILICON BY HYDROGEN [J]. APPLIED PHYSICS LETTERS, 1983, 43 (02) : 204 - 206

[23] VIBRATIONAL CHARACTERISTICS OF ACCEPTOR-HYDROGEN COMPLEXES IN SILICON [J]. APPLIED PHYSICS LETTERS, 1987, 50 (16) : 1086 - 1088

[24] LATTICE-RELAXATION DUE TO HYDROGEN PASSIVATION IN BORON-DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1988, 52 (20) : 1667 - 1669

[25] HYDROGEN PASSIVATION OF BORON ACCEPTORS IN SILICON - RAMAN STUDIES [J]. PHYSICAL REVIEW B, 1987, 35 (11): : 5921 - 5924

[26] TEMPERATURE-DEPENDENCE OF HYDROGEN VIBRATIONAL-MODES IN PASSIVATED BORON-DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1987, 51 (18) : 1413 - 1415

[27] FIELD DRIFT OF THE HYDROGEN-RELATED, ACCEPTOR-NEUTRALIZING DEFECT IN DIODES FROM HYDROGENATED SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 316 - 318

[28] PHOTOLUMINESCENCE STUDIES OF THE NEUTRALIZATION OF ACCEPTORS IN SILICON BY ATOMIC-HYDROGEN [J]. APPLIED PHYSICS LETTERS, 1985, 46 (07) : 689 - 691

[29] PASSIVATION OF SHALLOW ACCEPTORS BY H IN SI - A MICROSCOPIC STUDY BY PERTURBED ANGULAR-CORRELATIONS [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (18) : 2087 - 2090

[30] WICHERT T, I PRESS DEFECTS ELEC

[21] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (03): : 153 - 195

[22] DEACTIVATION OF THE BORON ACCEPTOR IN SILICON BY HYDROGEN [J]. APPLIED PHYSICS LETTERS, 1983, 43 (02) : 204 - 206

[23] VIBRATIONAL CHARACTERISTICS OF ACCEPTOR-HYDROGEN COMPLEXES IN SILICON [J]. APPLIED PHYSICS LETTERS, 1987, 50 (16) : 1086 - 1088

[24] LATTICE-RELAXATION DUE TO HYDROGEN PASSIVATION IN BORON-DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1988, 52 (20) : 1667 - 1669

[25] HYDROGEN PASSIVATION OF BORON ACCEPTORS IN SILICON - RAMAN STUDIES [J]. PHYSICAL REVIEW B, 1987, 35 (11): : 5921 - 5924

[26] TEMPERATURE-DEPENDENCE OF HYDROGEN VIBRATIONAL-MODES IN PASSIVATED BORON-DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1987, 51 (18) : 1413 - 1415

[27] FIELD DRIFT OF THE HYDROGEN-RELATED, ACCEPTOR-NEUTRALIZING DEFECT IN DIODES FROM HYDROGENATED SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 316 - 318

[28] PHOTOLUMINESCENCE STUDIES OF THE NEUTRALIZATION OF ACCEPTORS IN SILICON BY ATOMIC-HYDROGEN [J]. APPLIED PHYSICS LETTERS, 1985, 46 (07) : 689 - 691

[29] PASSIVATION OF SHALLOW ACCEPTORS BY H IN SI - A MICROSCOPIC STUDY BY PERTURBED ANGULAR-CORRELATIONS [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (18) : 2087 - 2090

[30] WICHERT T, I PRESS DEFECTS ELEC