CORRELATION BETWEEN FERMI LEVEL STABILIZATION POSITIONS AND MAXIMUM FREE CARRIER CONCENTRATIONS IN III-V COMPOUND SEMICONDUCTORS

被引：41

作者：

TOKUMITSU, E

机构：

[1] AT and T Bell Laboratories, Crawford Hill Laboratory, Holmdel, NJ

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 05期

关键词：

Amphoteric native defect; Autocompensation; Doping; Fermi-level stabilization; Free carrier concentration; Lll-V compound semiconductors;

D O I：

10.1143/JJAP.29.L698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Maximum carrier concentrations reported in the literature are compared with the respective Fermi level stabilization positions for various semiconductors. It is shown that heavy n-type (p-type) doping is obtainable for a semiconductor whose Fermi level stabilization position is located near the conduction (valence) band edge. © 1990 The Japan Society of Applied Physics.

引用

收藏

页码：L698 / L701

页数：4

相关论文

共 57 条

[1] ABOUT ROLE OF MINORITY CARRIERS IN IMPURITY CONDUCTION OF GASB [J].

ALIEV, MI ;

SAFARALI.GI ;

ABDINOVA, SG .

PHYSICA STATUS SOLIDI, 1967, 22 (02) :741-&

[2] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH [J].

ASTLES, MG ;

SMITH, FGH ;

WILLIAMS, EW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) :1750-1757

[3] MOCVD N-TYPE DOPING OF GAAS AND GAALAS USING SILICON AND SELENIUM AND FABRICATION OF DOUBLE HETEROSTRUCTURE BIPOLAR-TRANSISTOR [J].

AZOULAY, R ;

DUGRAND, L ;

ANKRI, D ;

RAO, EVK .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :453-460

[4]

BAILLARGEON JN, 1989, 2ND INT C CHEM BEAM

[5]

BENCHIMOL JL, 1989, 2ND INT C CHEM BEAM

[6]

Casey H.C., 1978, HETEROSTRUCTURE LASE

[7] TIN DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHENG, KY ;

CHO, AY ;

WAGNER, WR .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6328-6330

[8] INVESTIGATION OF IMPURITY VARIATIONS BY CATHODOLUMINESCENCE IMAGING - APPLICATION TO GASB-TE [J].

CHIN, AK ;

BONNER, WA .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :248-251

[9] ELECTRICAL CHARACTERIZATION OF P-TYPE ZNSE [J].

DEPUYDT, JM ;

HAASE, MA ;

CHENG, H ;

POTTS, JE .

APPLIED PHYSICS LETTERS, 1989, 55 (11) :1103-1105

[10] SI INCORPORATION IN ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

DRUMMOND, TJ ;

LYONS, WG ;

FISCHER, R ;

THORNE, RE ;

MORKOC, H ;

HOPKINS, CG ;

EVANS, CA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (04) :957-960

← 1 2 3 4 5 6 →