INTERFACE CHEMISTRY AND ELECTRICAL-PROPERTIES OF TUNGSTEN SCHOTTKY-BARRIER CONTACTS TO GAAS

被引：43

作者：

WALDROP, JR

机构：

来源：

关键词：

D O I：

10.1063/1.93509

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：350 / 352

页数：3

共 15 条

[11] UNIFIED DEFECT MODEL AND BEYOND
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SU, CY
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1019 - 1027
[12] INTERFACE CHEMISTRY OF METAL-GAAS SCHOTTKY-BARRIER CONTACTS
WALDROP, JR
GRANT, RW
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (10) : 630 - 632
[13] REFRACTORY-METAL CONTACTS TO GAAS - INTERFACE CHEMISTRY AND SCHOTTKY-BARRIER FORMATION
WALDROP, JR
KOWALCZYK, SP
GRANT, RW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 607 - 610
[14] SPUTTERED TIW-AU SCHOTTKY BARRIERS ON GAAS
WEINMAN, LS
JAMISON, SA
HELIX, MJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 838 - 840
[15] SURFACE DEFECT EFFECTS ON SCHOTTKY BARRIERS
WILLIAMS, RH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 929 - 936