共 13 条
- [1] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (13) : 838 - 841
- [3] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION [J]. PHYSICAL REVIEW B, 1978, 18 (10): : 5545 - 5559
- [4] CORRELATION OF GAAS SURFACE-CHEMISTRY AND INTERFACE FERMI-LEVEL POSITION - A SINGLE DEFECT MODEL INTERPRETATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 477 - 480
- [6] METAL CONTACTS TO CLEAN AND OXIDIZED CADMIUM TELLURIDE AND INDIUM-PHOSPHIDE SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 886 - 890
- [9] MORKOC H, 1978, ELECTRON LETT, V14, P515