HYDROGENATED AMORPHOUS-SILICON PREPARED BY ARF AND F2 EXCIMER LASER-INDUCED PHOTOCHEMICAL VAPOR-DEPOSITION

被引：25

作者：

TOYOSHIMA, Y

KUMATA, K

ITOH, U

MATSUDA, A

机构：

来源：

关键词：

D O I：

10.1063/1.98302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1925 / 1927

页数：3

共 9 条

[1] EWALD D, 1979, PHILOS MAG B, V42, P805
[2] Hanabusa M., 1987, Material Science Reports, V2, P51, DOI 10.1016/S0920-2307(87)80002-6
[3] VACUUM ULTRAVIOLET-ABSORPTION CROSS-SECTIONS OF SIH4, GEH4, SI2H6, AND SI3H8
ITOH, U
TOYOSHIMA, Y
ONUKI, H
WASHIDA, N
IBUKI, T
[J]. JOURNAL OF CHEMICAL PHYSICS, 1986, 85 (09) : 4867 - 4872
[4] KNIGHTS JC, 1981, B AM PHYS SOC, V26, P389
[5] PHOTOCHEMICAL VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FILMS FROM DISILANE AND TRISILANE USING A LOW-PRESSURE MERCURY LAMP
KUMATA, K
ITOH, U
TOYOSHIMA, Y
TANAKA, N
ANZAI, H
MATSUDA, A
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (20) : 1380 - 1382
[6] INFLUENCE OF POWER-SOURCE FREQUENCY ON THE PROPERTIES OF GD A-SI-H
MATSUDA, A
KAGA, T
TANAKA, H
TANAKA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L567 - L569
[7] QUANTITATIVE PHOTOEXCITATION STUDY OF SIH4 IN VACUUM ULTRAVIOLET
SUTO, M
LEE, LC
[J]. JOURNAL OF CHEMICAL PHYSICS, 1986, 84 (03) : 1160 - 1164
[8] AR(3P2) INDUCED CHEMICAL VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON
TOYOSHIMA, Y
KUMATA, K
ITOH, U
ARAI, K
MATSUDA, A
WASHIDA, N
INOUE, G
KATSUUMI, K
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (06) : 584 - 586
[9] TOYOSHIMA Y, 1985, 12TH INT C PHOT TOK