PHOTOCHEMICAL VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FILMS FROM DISILANE AND TRISILANE USING A LOW-PRESSURE MERCURY LAMP

被引：19

作者：

KUMATA, K

ITOH, U

TOYOSHIMA, Y

TANAKA, N

ANZAI, H

MATSUDA, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 20期

关键词：

D O I：

10.1063/1.96915

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1380 / 1382

页数：3

共 10 条

[1] PHOTOCHEMICAL VAPOR-DEPOSITION OF UNDOPED AND N-TYPE AMORPHOUS-SILICON FILMS PRODUCED FROM DISILANE
INOUE, T
KONAGAI, M
TAKAHASHI, K
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (08) : 774 - 776
[2] SILICON THIN-FILM FORMATION BY DIRECT PHOTOCHEMICAL DECOMPOSITION OF DISILANE
MISHIMA, Y
HIROSE, M
OSAKA, Y
NAGAMINE, K
ASHIDA, Y
KITAGAWA, N
ISOGAYA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (01): : L46 - L48
[3] PROPERTIES OF A-SI-H PREPARED BY THE PHOTOCHEMICAL DECOMPOSITION OF SI2H6
MISHIMA, Y
ASHIDA, Y
HIROSE, M
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 707 - 710
[4] NAKANO S, 1985, MATER RES SOC S P, V49, P275
[5] THE 147-NM PHOTOLYSIS OF DISILANE
PERKINS, GGA
LAMPE, FW
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) : 3764 - 3769
[6] PETERS JW, 1981, 1981 INT EL DEV M WA, P240
[7] OPTICAL AND ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON FILMS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION
SAITOH, T
MURAMATSU, S
SHIMADA, T
MIGITAKA, M
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 678 - 679
[8] SARKOZY RF, 1982, 1ST P INT S VLSI TEC, P68
[9] AR(3P2) INDUCED CHEMICAL VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON
TOYOSHIMA, Y
KUMATA, K
ITOH, U
ARAI, K
MATSUDA, A
WASHIDA, N
INOUE, G
KATSUUMI, K
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (06) : 584 - 586
[10] EFFECTS OF [H2SE] [DMZN] MOLAR RATIO ON EPITAXIAL ZNSE FILMS GROWN BY LOW-PRESSURE MOCVD
YOSHIKAWA, A
TANAKA, K
YAMAGA, S
KASAI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (10): : L773 - L775

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