EFFECTS OF LOW-LEVEL BORON DOPING ON THE PHOTOCURRENT OF AMORPHOUS-SILICON SCHOTTKY PHOTODIODES

被引：11

作者：

KAKINUMA, H

KASUYA, Y

SAKAMOTO, M

SHIBATA, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.342845

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2307 / 2312

页数：6

共 25 条

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