THE LOCALIZED DENSITY OF STATES IN AMORPHOUS-SILICON DETERMINED BY ELECTROPHOTOGRAPHY

被引：5

作者：

IMAGAWA, O ^{[1
]}

IWANISHI, M ^{[1
]}

YOKOYAMA, S ^{[1
]}

SHIMAKAWA, K ^{[1
]}

机构：

[1] GIFU UNIV,FAC ENGN,DEPT ELECTR,GIFU 50111,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 09期

关键词：

D O I：

10.1063/1.337732

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3176 / 3181

页数：6

共 19 条

[1] XEROGRAPHIC SPECTROSCOPY OF LOCALIZED ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS [J].

ABKOWITZ, M ;

ENCK, RC .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :443-446

[2] EVIDENCE OF EQUILIBRIUM NATIVE DEFECT POPULATIONS IN AMORPHOUS CHALCOGENIDES FROM ANALYSES OF XEROGRAPHIC SPECTRA [J].

ABKOWITZ, M ;

MARKOVICS, JM .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (03) :L31-L36

[3] DEFECT CREATION AND HYDROGEN EVOLUTION IN AMORPHOUS SI-H [J].

BIEGELSEN, DK ;

STREET, RA ;

TSAI, CC ;

KNIGHTS, JC .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :285-290

[4] DETERMINATION OF MIDGAP DENSITY OF STATES IN A-SI-H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS [J].

DENBOER, W .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :451-454

[5] ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J].

GOODMAN, NB ;

FRITZSCHE, H .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01) :149-165

[6] ELECTRONIC DENSITY OF STATES IN DISCHARGE-PRODUCED AMORPHOUS SILICON [J].

HIROSE, M ;

SUZUKI, T ;

DOHLER, GH .

APPLIED PHYSICS LETTERS, 1979, 34 (03) :234-236

[7] ELECTROPHOTOGRAPHIC SPECTROSCOPY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON [J].

IMAGAWA, O ;

IWANISHI, M ;

YOKOYAMA, S ;

SHIMAKAWA, K .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :359-362

[8] LOCALIZED DENSITY OF STATES IN AMORPHOUS-SILICON DETERMINED BY ELECTROPHOTOGRAPHY [J].

IMAGAWA, O ;

AKIYAMA, T ;

SHIMAKAWA, K .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :438-439

[9] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J].

JACKSON, WB ;

AMER, NM .

PHYSICAL REVIEW B, 1982, 25 (08) :5559-5562

[10] THE CORRELATION-ENERGY OF THE DANGLING SILICON BOND IN A-SI-H [J].

JACKSON, WB .

SOLID STATE COMMUNICATIONS, 1982, 44 (04) :477-480

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