LOCALIZED DENSITY OF STATES IN AMORPHOUS-SILICON DETERMINED BY ELECTROPHOTOGRAPHY

被引：5

作者：

IMAGAWA, O ^{[1
]}

AKIYAMA, T ^{[1
]}

SHIMAKAWA, K ^{[1
]}

机构：

[1] GIFU UNIV,FAC ENGN,DEPT ELECTR,YANAGIDO,GIFU 50111,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.95250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：438 / 439

页数：2

共 12 条

[1] XEROGRAPHIC SPECTROSCOPY OF LOCALIZED ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS [J].

ABKOWITZ, M ;

ENCK, RC .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :443-446

[2] DETERMINATION OF MIDGAP DENSITY OF STATES IN A-SI-H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS [J].

DENBOER, W .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :451-454

[3] ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J].

GOODMAN, NB ;

FRITZSCHE, H .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01) :149-165

[4] ELECTRONIC DENSITY OF STATES IN DISCHARGE-PRODUCED AMORPHOUS SILICON [J].

HIROSE, M ;

SUZUKI, T ;

DOHLER, GH .

APPLIED PHYSICS LETTERS, 1979, 34 (03) :234-236

[5] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J].

JACKSON, WB ;

AMER, NM .

PHYSICAL REVIEW B, 1982, 25 (08) :5559-5562

[6] THE CORRELATION-ENERGY OF THE DANGLING SILICON BOND IN A-SI-H [J].

JACKSON, WB .

SOLID STATE COMMUNICATIONS, 1982, 44 (04) :477-480

[7] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].

LANG, DV ;

COHEN, JD ;

HARBISON, JP .

PHYSICAL REVIEW B, 1982, 25 (08) :5285-5320

[8] THE DENSITY OF STATES IN AMORPHOUS-SILICON DETERMINED BY SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS [J].

MACKENZIE, KD ;

LECOMBER, PG ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (04) :377-389

[9] HOLE EMISSION DEFECT STATES IN AMORPHOUS AS2SE3 [J].

MELNYK, AR .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :837-842

[10] ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY - ITS APPLICATION TO THE STUDY OF GAP STATES OF A-SI-H [J].

OKUSHI, H ;

TOKUMARU, Y ;

YAMASAKI, S ;

OHEDA, H ;

TANAKA, K .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :613-616

← 1 2 →