ULTRAFAST PIPELINED ADDERS USING RTTS

被引:3
作者
MOHAN, S
MAZUMDER, P
MAINS, RK
SUN, JP
HADDAD, GI
机构
[1] Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor
关键词
TRANSISTORS; ADDERS;
D O I
10.1049/el:19910520
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ultrafast adders that perform 32 bit additions in less than 1 ns using resonant tunnelling transistors (RTTs) are proposed. Simulation results showing their subnanosecond performance are presented. The adders are shown to be better than others in terms of both area and speed. These results are obtained using true bistable logic which makes use of the bistability of circuits using the negative differential resistance (NDR) characteristic of the RTTs.
引用
收藏
页码:830 / 831
页数:2
相关论文
共 6 条
[1]   RESONANT TUNNELING THROUGH DOUBLE BARRIERS, PERPENDICULAR QUANTUM TRANSPORT PHENOMENA IN SUPERLATTICES, AND THEIR DEVICE APPLICATIONS [J].
CAPASSO, F ;
MOHAMMED, K ;
CHO, AY .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1853-1869
[2]   A PROPOSED NARROW-BAND-GAP BASE TRANSISTOR STRUCTURE [J].
HADDAD, GI ;
MAINS, RK ;
REDDY, UK ;
EAST, JR .
SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (03) :437-441
[3]   OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT TUNNELING DIODE MODELING [J].
MAINS, RK ;
SUN, JP ;
HADDAD, GI .
APPLIED PHYSICS LETTERS, 1989, 55 (04) :371-373
[4]  
Reddy U. K., 1989, Nanostructure Physics and Fabrication. Proceedings of the International Symposium, P189
[5]   REALIZATION OF A 3-TERMINAL RESONANT TUNNELING DEVICE - THE BIPOLAR QUANTUM RESONANT TUNNELING TRANSISTOR [J].
REED, MA ;
FRENSLEY, WR ;
MATYI, RJ ;
RANDALL, JN ;
SEABAUGH, AC .
APPLIED PHYSICS LETTERS, 1989, 54 (11) :1034-1036
[6]   EXPERIMENTAL REALIZATION OF A RESONANT TUNNELING TRANSISTOR [J].
WOODWARD, TK ;
MCGILL, TC ;
BURNHAM, RD .
APPLIED PHYSICS LETTERS, 1987, 50 (08) :451-453