MEASUREMENTS OF DG/DN AND DN/DN AND THEIR DEPENDENCE ON PHOTON ENERGY IN LAMBDA = 1.5 MU-M INGAASP LASER-DIODES

被引：72

作者：

WESTBROOK, LD

机构：

来源：

IEE PROCEEDINGS-J OPTOELECTRONICS | 1986年 / 133卷 / 02期

关键词：

D O I：

10.1049/ip-j.1986.0022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：135 / 142

页数：8

共 16 条

[1]

ADAMS MJ, 1982, IEE P I, V129, P229

[2] INJECTED CARRIER EFFECTS ON MODAL PROPERTIES OF 1.55-MU-M GAINASP LASERS [J].

BOULEY, JC ;

CHARIL, J ;

SOREL, Y ;

CHAMINANT, G .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :969-974

[3] CALCULATED ABSORPTION, EMISSION, AND GAIN IN IN0.72GA0.28AS0.6P0.4 [J].

DUTTA, NK .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6095-6100

[4] INTERMODAL INJECTION LOCKING AND GAIN PROFILE MEASUREMENT OF GAALAS LASERS [J].

GOLDBERG, L ;

TAYLOR, HF ;

WELLER, JF .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (11) :1226-1229

[5] CARRIER AND GAIN SPATIAL PROFILES IN GAAS STRIPE GEOMETRY LASERS [J].

HAKKI, BW .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (11) :5021-5028

[6] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J].

HAKKI, BW ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4113-4119

[7] ABSORPTION, EMISSION, AND GAIN SPECTRA OF 1.3-MU-M INGAASP QUATERNARY LASERS [J].

HENRY, CH ;

LOGAN, RA ;

TEMKIN, H ;

MERRITT, FR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :941-946

[8] TEMPERATURE-DEPENDENCE OF OPTICAL GAIN SPECTRA IN GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS [J].

JUNG, H ;

GOBEL, E ;

ROMANEK, KM ;

PILKUHN, MH .

APPLIED PHYSICS LETTERS, 1981, 39 (06) :468-470

[9] THE CARRIER-INDUCED INDEX CHANGE IN ALGAAS AND 1.3 MU-M INGAASP DIODE-LASERS [J].

MANNING, J ;

OLSHANSKY, R ;

SU, CB .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (10) :1525-1530

[10] GAIN SPECTRA OF QUATERNARY SEMICONDUCTORS [J].

OSINSKI, M ;

ADAMS, MJ .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1982, 129 (06) :229-236

← 1 2 →