RECENT DEVELOPMENTS IN SEMICONDUCTOR PIEZORESISTIVE DEVICES

[11] PIEZORESISTIVE EFFECT IN P-TYPE PBTE [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (04) : 692 - 693

[12] PIEZORESISTIVITY IN THE OXIDE SEMICONDUCTOR RUTILE (TIO2) [J]. PHYSICAL REVIEW, 1960, 117 (06): : 1469 - 1472

[13] HOLLANDER LE, 1962, B AM PHYS SOC, V7, P174

[14] DIFFUSANT IMPURITY-CONCENTRATION PROFILES IN THIN LAYERS ON SILICON [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 331 - &

[15] ILISAVSKII YV, 1962, SOV PHYS-SOL STATE, V4, P674

[16] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[17] STRESS DEPENDENCE OF PIEZORESISTANCE EFFECT [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) : 2050 - &

[18] USE OF PIEZORESISTIVE MATERIALS IN THE MEASUREMENT OF DISPLACEMENT, FORCE, AND TORQUE [J]. JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA, 1957, 29 (10) : 1096 - 1101

[19] MASON WP, 1960, 15NY60 INSTR SOC AM

[20] MASON WP, 1962, ELECTRONICS, V35, P35

[11] PIEZORESISTIVE EFFECT IN P-TYPE PBTE [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (04) : 692 - 693

[12] PIEZORESISTIVITY IN THE OXIDE SEMICONDUCTOR RUTILE (TIO2) [J]. PHYSICAL REVIEW, 1960, 117 (06): : 1469 - 1472

[13] HOLLANDER LE, 1962, B AM PHYS SOC, V7, P174

[14] DIFFUSANT IMPURITY-CONCENTRATION PROFILES IN THIN LAYERS ON SILICON [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 331 - &

[15] ILISAVSKII YV, 1962, SOV PHYS-SOL STATE, V4, P674

[16] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[17] STRESS DEPENDENCE OF PIEZORESISTANCE EFFECT [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) : 2050 - &

[18] USE OF PIEZORESISTIVE MATERIALS IN THE MEASUREMENT OF DISPLACEMENT, FORCE, AND TORQUE [J]. JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA, 1957, 29 (10) : 1096 - 1101

[19] MASON WP, 1960, 15NY60 INSTR SOC AM

[20] MASON WP, 1962, ELECTRONICS, V35, P35