RECENT DEVELOPMENTS IN SEMICONDUCTOR PIEZORESISTIVE DEVICES

[31] SANCHEZ JC, 1961, STRAIN GUAGE READING, V4, P3

[32] SANCHEZ JC, 1962, INSTRUM SOC AM J, V9, P38

[33] SANCHEZ JC, 1961, 37SL61 SOC AM C PREP

[34] TUNNEL DIODE HYDROSTATIC PRESSURE TRANSDUCER [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1962, 33 (02) : 155 - &

[35] PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1954, 94 (01): : 42 - 49

[36] SMITH CS, 1958, SOLID STATE PHYSICS, V6, P245

[37] OPTICAL ABSORPTION IN N-TYPE GALLIUM PHOSPHIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (3-4) : 339 - 341

[38] DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J]. SOLID-STATE ELECTRONICS, 1961, 2 (2-3) : 123 - 132

[39] TIMOSHENKO S, 1940, THEORY PLATES SHELLS, P59

[40] SILICON DIFFUSED-ELEMENT PIEZORESISTIVE DIAPHRAGMS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3322 - &

[31] SANCHEZ JC, 1961, STRAIN GUAGE READING, V4, P3

[32] SANCHEZ JC, 1962, INSTRUM SOC AM J, V9, P38

[33] SANCHEZ JC, 1961, 37SL61 SOC AM C PREP

[34] TUNNEL DIODE HYDROSTATIC PRESSURE TRANSDUCER [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1962, 33 (02) : 155 - &

[35] PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1954, 94 (01): : 42 - 49

[36] SMITH CS, 1958, SOLID STATE PHYSICS, V6, P245

[37] OPTICAL ABSORPTION IN N-TYPE GALLIUM PHOSPHIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (3-4) : 339 - 341

[38] DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J]. SOLID-STATE ELECTRONICS, 1961, 2 (2-3) : 123 - 132

[39] TIMOSHENKO S, 1940, THEORY PLATES SHELLS, P59

[40] SILICON DIFFUSED-ELEMENT PIEZORESISTIVE DIAPHRAGMS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3322 - &