CHARACTERIZATION OF THE ALUMINUM SURFACE-LAYER IMPLANTED WITH NITROGEN

被引：47

作者：

OHIRA, S ^{[1
]}

IWAKI, M ^{[1
]}

机构：

[1] INST PHYS & CHEM RES,WAKO,SAITAMA 35101,JAPAN

来源：

MATERIALS SCIENCE AND ENGINEERING | 1987年 / 90卷

关键词：

D O I：

10.1016/0025-5416(87)90205-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：143 / 148

页数：6

共 9 条

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HEZEL, R
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[4] SURFACE STRESSES AND THE HARDNESS OF ION-IMPLANTED ALUMINUM
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[5] CHARACTERISTICS OF THE METAL-INSULATOR SEMICONDUCTOR STRUCTURE - AIN-SI
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[7] OHIRA S, 1986, IN PRESS NUCL INSTRU
[8] FORMATION OF ALN BY NITROGEN ION-IMPLANTATION
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[J]. THIN SOLID FILMS, 1983, 109 (01) : 37 - 45
[9] EPITAXIAL-GROWTH OF GAN/AIN HETEROSTRUCTURES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 250 - 253