THE ANALYSIS OF DIFFUSION DATA BY A METHOD OF MOMENTS

被引：8

作者：

GHEZ, R

FEHRIBACH, JD

OEHRLEIN, GS

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 11期

关键词：

D O I：

10.1149/1.2113659

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2759 / 2761

页数：3

共 9 条

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[2]

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[3] ASYMPTOTIC ESTIMATES OF DIFFUSION TIMES FOR RAPID THERMAL ANNEALING [J].

FEHRIBACH, JD ;

GHEZ, R ;

OEHRLEIN, GS .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :433-435

[4]

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[5] EXACT DESCRIPTION AND DATA FITTING OF ION-IMPLANTED DOPANT PROFILE EVOLUTION DURING ANNEALING [J].

GHEZ, R ;

OEHRLEIN, GS ;

SEDGWICK, TO ;

MOREHEAD, FF ;

LEE, YH .

APPLIED PHYSICS LETTERS, 1984, 45 (08) :881-883

[6] ON FITTING ERROR FUNCTIONS TO DATA [J].

GHEZ, R ;

SMALL, MB .

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[7] ON MODELS OF PHOSPHORUS DIFFUSION IN SILICON [J].

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DUTTON, RW .

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[8]

OEHRLEIN GS, 1984, 13TH P INT C DEF SEM, P539

[9]

TUCK B, 1974, INTRO DIFFUSION SEMI, P199

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