ON MODELS OF PHOSPHORUS DIFFUSION IN SILICON

被引：105

作者：

HU, SM ^{[1
]}

FAHEY, P ^{[1
]}

DUTTON, RW ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 12期

关键词：

D O I：

10.1063/1.331998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6912 / 6922

页数：11

共 86 条

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[4] SIP PRECIPITATION WITHIN DOPED SILICON LATTICE, CONCOMITANT WITH PHOSPHORUS PREDEPOSITION
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[5] GROWTH OF STACKING-FAULTS AND DISLOCATIONS INDUCED IN SILICON BY PHOSPHORUS PREDEPOSITION
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[6] ROLE OF A POLYSILICON LAYER IN THE REDUCTION OF LATTICE-DEFECTS ASSOCIATED WITH PHOSPHORUS PREDEPOSITION IN SILICON
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[7] BARUCH P, 1961, DISCUSS FARADAY SOC, V31, P76
[8] DIFFUSION LIMITED PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON
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[J]. APPLIED PHYSICS LETTERS, 1983, 42 (06) : 525 - 527
[9] PHOSPHORUS DIFFUSION INTO SILICON FROM CHEMICALLY VAPOUR-DEPOSITED PHOSPHOSILICATE GLASS
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[J]. THIN SOLID FILMS, 1982, 87 (04) : 373 - 378
[10] CLAEYS CL, 1978, SEMICONDUCTOR CHARAC, P366

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