ON MODELS OF PHOSPHORUS DIFFUSION IN SILICON

被引：105

作者：

HU, SM ^{[1
]}

FAHEY, P ^{[1
]}

DUTTON, RW ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 12期

关键词：

D O I：

10.1063/1.331998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：6912 / 6922

页数：11

相关论文

共 86 条

[41] INOUE S, 1981, SEMICONDUCTOR SILICO, P596
[42] PRECIPITATES FORMED BY HIGH-CONCENTRATION PHOSPHORUS DIFFUSION IN SILICON
JACCODINE, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (07) : 3105 - +
[43] KENDALL DL, 1977, C P IEEE SECTIONAL M, P1
[44] KIMERLING LC, 1979, I PHYS C SER, V46, P56
[45] FORMATION AND COMPOSITION OF SURFACE LAYERS AND SOLUBILITY LIMITS OF PHOSPHORUS DURING DIFFUSION IN SILICON
KOOI, E
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) : 1383 - 1381
[46] KROGER FA, 1978, J ELECTROCHEM SOC, V125, P998
[47] GOLD GETTERING IN SILICON BY PHOSPHORUS DIFFUSION AND ARGON IMPLANTATION - MECHANISMS AND LIMITATIONS
LECROSNIER, D
PAUGAM, J
PELOUS, G
RICHOU, F
SALVI, M
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5090 - 5097
[48] LONG-RANGE ENHANCEMENT OF BORON DIFFUSIVITY INDUCED BY A HIGH-SURFACE-CONCENTRATION PHOSPHORUS DIFFUSION
LECROSNIER, D
GAUNEAU, M
PAUGAM, J
PELOUS, G
RICHOU, F
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (03) : 224 - 226
[49] NEW OBSERVATION OF ENHANCED DIFFUSION
LEE, DB
WILLOUGHBY, AF
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (01) : 245 - +
[50] LEE DB, 1974, PHILIPS RES REPT S, V5

← 1 2 3 4 5 6 7 8 9 →