EXACT DESCRIPTION AND DATA FITTING OF ION-IMPLANTED DOPANT PROFILE EVOLUTION DURING ANNEALING

被引：17

作者：

GHEZ, R

OEHRLEIN, GS

SEDGWICK, TO

MOREHEAD, FF

LEE, YH

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 08期

关键词：

D O I：

10.1063/1.95441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：881 / 883

页数：3

共 10 条

[1]

CARSLAW HS, 1959, CONDUCTION HEAT SOLI

[2]

DEARNALEY G, 1973, ION IMPLANTATION, P499

[3] QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT [J].

FAIR, RB ;

TSAI, JCC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) :1107-1118

[4]

GHANDHI SK, 1983, VLSI FABRICATION PRI, P345

[5] ON MODELS OF PHOSPHORUS DIFFUSION IN SILICON [J].

HU, SM ;

FAHEY, P ;

DUTTON, RW .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6912-6922

[6] TRANSIENT ENHANCED DIFFUSION IN ARSENIC-IMPLANTED SHORT-TIME ANNEALED SILICON [J].

KALISH, R ;

SEDGWICK, TO ;

MADER, S ;

SHATAS, S .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :107-109

[7] DOPANT DIFFUSION IN SILICON - A CONSISTENT VIEW INVOLVING NONEQUILIBRIUM DEFECTS [J].

MATHIOT, D ;

PFISTER, JC .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3518-3530

[8] DIFFUSION OF PHOSPHORUS DURING RAPID THERMAL ANNEALING OF ION-IMPLANTED SILICON [J].

OEHRLEIN, GS ;

COHEN, SA ;

SEDGWICK, TO .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :417-419

[9]

SEDGWICK TO, 1984, 2ND P INT S VLSI, V84, P192

[10]

SEIDEL TE, 1969, T METALL SOC AIME, V245, P491

← 1 →