STUDY OF THE BROAD LUMINESCENCE BANDS IN GE-IMPLANTED GAAS CENTERED AT 1.44-1.46 EV

Above- and below-band-gap excitation photoluminescence studies were performed on GaAs samples implanted with Ge, Ga, As, {Ge + Ga}, and {Ge + As} to assess the nature of a broad luminescence band, the so-called Q band, centered in the 1.44-1.46-eV range. Below-band-gap excitation enabled resolution of the broad band into two separate overlapping bands. These measurements, in conjunction with sample temperature-dependent studies, indicate that the main contribution to the broad band observed in Ge-implanted GaAs is due to the Ga antisite double-acceptor defect.