LUMINESCENCE CHARACTERISTICS OF THE 1.4 EV SILICON RELATED COMPLEX IN GALLIUM-ARSENIDE

被引：14

作者：

POMRENKE, GS

PARK, YS

机构：

[1] USAF,WAL,AVION LAB,WRIGHT PATTERSON AFB,OH 45433

[2] USAF,INST TECHNOL,ATC,WRIGHT PATTERSON AFB,OH 45433

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90283-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：414 / 419

页数：6

共 15 条

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[6] PHOTO-LUMINESCENCE OF THERMALLY TREATED N-TYPE SI-DOPED GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 6187 - 6188
[7] STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED GAAS AND REDISTRIBUTION OF CR DURING ANNEALING
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ORMOND, RD
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[8] PANKOVE JI, 1971, OPTICAL PROCESSES SE, P151
[9] Sansbury J. D., 1970, Radiation Effects, V6, P269, DOI 10.1080/00337577008236306
[10] OPTICAL AND ELECTRICAL-PROPERTIES OF DISORDERED LAYERS IN GAAS CRYSTALS PRODUCED BY SI+-ION IMPLANTATION
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MATSUMORI, T
[J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 719 - 726

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