MOLECULAR-BEAM EPITAXY OF GAASXP1-X USING LOW-ENERGY P+ ION-BEAM

被引:4
作者
MARUNO, S
MORISHITA, Y
ISU, T
NOMURA, Y
OGATA, H
机构
关键词
D O I
10.1007/BF02652227
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:21 / 24
页数:4
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