MOLECULAR-BEAM EPITAXY OF INP USING LOW-ENERGY P+ ION-BEAM

被引：6

作者：

MARUNO, S

MORISHITA, Y

ISU, T

NOMURA, Y

OGATA, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(87)90414-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：338 / 343

页数：6

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[1] MECHANISMS OF EPITAXIAL GAAS CRYSTAL-GROWTH BY SPUTTER DEPOSITION - ROLE OF ION SURFACE INTERACTIONS
BARNETT, SA
GREENE, JE
[J]. SURFACE SCIENCE, 1983, 128 (2-3) : 401 - 416
[2] ELECTRICAL AND OPTICAL-PROPERTIES OF INP GROWN BY MOLECULAR-BEAM EPITAXY USING CRACKED PHOSPHINE
CHOW, R
CHAI, YG
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (04) : 383 - 385
[3] A PH3 CRACKING FURNACE FOR MOLECULAR-BEAM EPITAXY
CHOW, R
CHAI, YG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (01): : 49 - 54
[4] ON THE DESIGN AND CHARACTERIZATION OF A NOVEL ARSINE CRACKING FURNACE UTILIZING CATALYTIC DECOMPOSITION OF ASH3 TO YIELD A PURELY MONOMERIC SOURCE OF ARSENIC FOR MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS
KAPITAN, LW
LITTON, CW
CLARK, GC
COLTER, PC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 280 - 284
[5] GAS SOURCE MBE GROWTH OF HIGH-QUALITY INP USING TRIETHYLINDIUM AND PHOSPHINE
KAWAGUCHI, Y
ASAHI, H
NAGAI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (04): : L221 - L223
[6] PHOTO-LUMINESCENCE OF UNDOPED (100) INP HOMOEPITAXIAL FILMS GROWN BY MOLECULAR-BEAM EPITAXY
KAWAMURA, Y
IKEDA, M
ASAHI, H
OKAMOTO, H
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 481 - 484
[7] SUBSTRATE-TEMPERATURE LIMITS FOR EPITAXY OF INP BY MBE
NORRIS, MT
STANLEY, CR
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (08) : 617 - 620
[8] GAS SOURCE MBE OF INP AND GAXIN1-XPYAS1-Y - MATERIALS PROPERTIES AND HETEROSTRUCTURE LASERS
PANISH, MB
TEMKIN, H
SUMSKI, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 657 - 665
[9] EFFECTS OF GROWTH TEMPERATURE ON OPTICAL AND DEEP LEVEL SPECTROSCOPY OF HIGH-QUALITY INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
PUDENZI, MAA
MOHAMMED, K
MERZ, JL
KASEMSET, D
HESS, KL
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2788 - 2792
[10] HOMOEPITAXIAL MOLECULAR-BEAM GROWTH OF INP ON THERMALLY CLEANED (100) ORIENTED SUBSTRATES
ROBERTS, JS
DAWSON, P
SCOTT, GB
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 905 - 907