IS INTRINSIC BISTABILITY REALLY INTRINSIC TRISTABILITY

被引:16
作者
COON, DD [1 ]
BANDARA, KMSV [1 ]
ZHAO, H [1 ]
机构
[1] UNIV PITTSBURGH,DEPT PHYS,APPL TECHNOL LAB,PITTSBURGH,PA 15260
关键词
D O I
10.1063/1.101145
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:2115 / 2117
页数:3
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[11]   INVESTIGATIONS OF THE NEGATIVE DIFFERENTIAL CONDUCTIVITY AND CURRENT BISTABILITY IN DOUBLE BARRIER N+GAAS/(ALGA)AS/GAAS/(ALGA)AS/N+GAAS RESONANT TUNNELLING DEVICES USING HIGH MAGNETIC-FIELDS [J].
PAYLING, CA ;
ALVES, E ;
EAVES, L ;
FOSTER, TJ ;
HENINI, M ;
HUGHES, OH ;
SIMMONDS, PE ;
PORTAL, JC ;
HILL, G ;
PATE, MA .
JOURNAL DE PHYSIQUE, 1987, 48 (C-5) :289-292
[12]   SPACE-CHARGE BUILDUP AND BISTABILITY IN RESONANT-TUNNELING DOUBLE-BARRIER STRUCTURES [J].
SHEARD, FW ;
TOOMBS, GA .
APPLIED PHYSICS LETTERS, 1988, 52 (15) :1228-1230
[13]   LIFETIME MATRIX IN COLLISION THEORY [J].
SMITH, FT .
PHYSICAL REVIEW, 1960, 118 (01) :349-356
[14]   OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES - COMMENT [J].
SOLLNER, TCLG .
PHYSICAL REVIEW LETTERS, 1987, 59 (14) :1622-1622
[15]   TUNNELING IN A FINITE SUPERLATTICE [J].
TSU, R ;
ESAKI, L .
APPLIED PHYSICS LETTERS, 1973, 22 (11) :562-564
[16]   PICOSECOND SWITCHING TIME MEASUREMENT OF A RESONANT TUNNELING DIODE [J].
WHITAKER, JF ;
MOUROU, GA ;
SOLLNER, TCLG ;
GOODHUE, WD .
APPLIED PHYSICS LETTERS, 1988, 53 (05) :385-387
[17]   RESONANT TUNNELING AND INTRINSIC BISTABILITY IN ASYMMETRIC DOUBLE-BARRIER HETEROSTRUCTURES [J].
ZASLAVSKY, A ;
GOLDMAN, VJ ;
TSUI, DC ;
CUNNINGHAM, JE .
APPLIED PHYSICS LETTERS, 1988, 53 (15) :1408-1410