XECL LASER CONTROLLED CHEMICAL ETCHING OF ALUMINUM IN CHLORINE GAS

被引：12

作者：

KOREN, G ^{[1
]}

HO, F ^{[1
]}

RITSKO, JJ ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1986年 / 40卷 / 01期

关键词：

D O I：

10.1007/BF00616586

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：13 / 23

页数：11

相关论文

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