NUMERICAL-SIMULATION OF SIGE HBTS AT CRYOGENIC TEMPERATURES

被引：13

作者：

RICHEY, DM

CRESSLER, JD

JAEGER, RC

机构：

来源：

JOURNAL DE PHYSIQUE IV | 1994年 / 4卷 / C6期

关键词：

D O I：

10.1051/jp4:1994620

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper describes SCORPIO, a new one-dimensional, drift-diffusion simulator for modeling silicon-germanium heterojunction bipolar transistors (SiGe HBT's) over a wide temperature range (77-400K). SCORPIO will be used to investigate fundamental low-temperature device physics problems and key device design issues. Comparisons of simulation results with experimental measurements are being used to ensure accurate model calibration.

引用

页码：127 / 132

页数：6

共 19 条

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