LOW-TEMPERATURE REACTIONS AT SI-METAL CONTACTS - FROM SIO2 GROWTH DUE TO SI-AU REACTION TO THE MECHANISM OF SILICIDE FORMATION

被引：40

作者：

HIRAKI, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 04期

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D O I：

10.1143/JJAP.22.549

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：549 / 562

页数：14

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[18] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS
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