THERMALLY STABLE PD/GE OHMIC CONTACTS TO N-TYPE GAAS

被引：48

作者：

TSUCHIMOTO, J

SHIKATA, S

HAYASHI, H

机构：

[1] Opto-Electronics Laboratories, Sumitomo Electric Industries Ltd., Sakae-ku, Yokohama 244

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 09期

关键词：

D O I：

10.1063/1.348866

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermally stable Pd/Ge ohmic contacts to n-type GaAs are obtained by a rapid thermal annealing method. Compared to the conventional AuGe based ohmic metals, the surface morphology is smooth with high uniformity of constituent. A small deterioration from 1.0 x 10(-5) OMEGA cm2 to 1.2 x 10(-5) OMEGA cm2 is observed at 300-degrees-C for 10(3) h. The activation energy was 1.9 eV and the lifetime of this contact, defined as the time of 10% deterioration, is expected to be over 10(9) years at 70-degrees-C. The mechanism of the deterioration for Pd/Ge ohmic contacts is also discussed, utilizing Auger electron spectroscopy and x-ray photoemission spectroscopy analysis.

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收藏

页码：6556 / 6563

页数：8

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