学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
SECONDARY ION MASS-SPECTROMETRY STUDY OF PD-BASED OHMIC CONTACTS TO GAAS AND ALGAAS/GAAS
被引:20
作者
:
CHEN, CL
论文数:
0
引用数:
0
h-index:
0
CHEN, CL
HOLLIS, MA
论文数:
0
引用数:
0
h-index:
0
HOLLIS, MA
MAHONEY, LJ
论文数:
0
引用数:
0
h-index:
0
MAHONEY, LJ
GOODHUE, WD
论文数:
0
引用数:
0
h-index:
0
GOODHUE, WD
MANFRA, MJ
论文数:
0
引用数:
0
h-index:
0
MANFRA, MJ
MURPHY, RA
论文数:
0
引用数:
0
h-index:
0
MURPHY, RA
机构
:
来源
:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
1987年
/ 5卷
/ 04期
关键词
:
D O I
:
10.1116/1.583687
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:902 / 907
页数:6
相关论文
共 11 条
[1]
LOW-RESISTANCE OHMIC CONTACTS TO PARA-TYPE GAAS USING ZN/PD/AU METALLIZATION
[J].
BROOKS, RC
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
BROOKS, RC
;
CHEN, CL
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
CHEN, CL
;
CHU, A
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
CHU, A
;
MAHONEY, LJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MAHONEY, LJ
;
MAVROIDES, JG
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MAVROIDES, JG
;
MANFRA, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MANFRA, MJ
;
FINN, MC
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
FINN, MC
.
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(10)
:525
-527
[2]
LOW RESISTANCE PD/GE/AU AND GE/PD/AU OHMIC CONTACTS TO NORMAL-TYPE GAAS
[J].
CHEN, CL
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, Lexington, MA, USA, MIT, Lexington, MA, USA
CHEN, CL
;
MAHONEY, LJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, Lexington, MA, USA, MIT, Lexington, MA, USA
MAHONEY, LJ
;
FINN, MC
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, Lexington, MA, USA, MIT, Lexington, MA, USA
FINN, MC
;
BROOKS, RC
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, Lexington, MA, USA, MIT, Lexington, MA, USA
BROOKS, RC
;
CHU, A
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, Lexington, MA, USA, MIT, Lexington, MA, USA
CHU, A
;
MAVROIDES, JG
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, Lexington, MA, USA, MIT, Lexington, MA, USA
MAVROIDES, JG
.
APPLIED PHYSICS LETTERS,
1986,
48
(08)
:535
-537
[3]
MECHANISM OF SIMS MATRIX EFFECT
[J].
DELINE, VR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT CHEM,URBANA,IL 61801
DELINE, VR
;
KATZ, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT CHEM,URBANA,IL 61801
KATZ, W
;
EVANS, CA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT CHEM,URBANA,IL 61801
EVANS, CA
.
APPLIED PHYSICS LETTERS,
1978,
33
(09)
:832
-835
[4]
COMPREHENSIVE STUDY OF AUMN P-TYPE OHMIC CONTACT FOR GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS
[J].
DUBONCHEVALLIER, C
论文数:
0
引用数:
0
h-index:
0
DUBONCHEVALLIER, C
;
GAUNEAU, M
论文数:
0
引用数:
0
h-index:
0
GAUNEAU, M
;
BRESSE, JF
论文数:
0
引用数:
0
h-index:
0
BRESSE, JF
;
IZRAEL, A
论文数:
0
引用数:
0
h-index:
0
IZRAEL, A
;
ANKRI, D
论文数:
0
引用数:
0
h-index:
0
ANKRI, D
.
JOURNAL OF APPLIED PHYSICS,
1986,
59
(11)
:3783
-3786
[5]
PD-GE CONTACTS TO N-TYPE GAAS
[J].
GRINOLDS, HR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
GRINOLDS, HR
;
ROBINSON, GY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
ROBINSON, GY
.
SOLID-STATE ELECTRONICS,
1980,
23
(09)
:973
-&
[6]
LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159
[7]
CONTACT REACTIONS IN PD-GAAS JUNCTIONS
[J].
OLOWOLAFE, JO
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
OLOWOLAFE, JO
;
HO, PS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
HO, PS
;
HOVEL, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
HOVEL, HJ
;
LEWIS, JE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
LEWIS, JE
;
WOODALL, JM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
WOODALL, JM
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(02)
:955
-962
[8]
SINTERED OHMIC CONTACTS TO N-TYPE AND P-TYPE GAAS
[J].
SINHA, AK
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SINHA, AK
;
SMITH, TE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SMITH, TE
;
LEVINSTEIN, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LEVINSTEIN, HJ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
ED22
(05)
:218
-224
[9]
NOISE-FIGURE CHARACTERISTICS OF 1/2-MU-M GATE SINGLE-HETEROJUNCTION HIGH-ELECTRON-MOBILITY FETS AT 35 GHZ
[J].
SOVERO, EA
论文数:
0
引用数:
0
h-index:
0
SOVERO, EA
;
GUPTA, AK
论文数:
0
引用数:
0
h-index:
0
GUPTA, AK
;
HIGGINS, JA
论文数:
0
引用数:
0
h-index:
0
HIGGINS, JA
.
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(03)
:179
-181
[10]
AIGAAS/GAAS 2-DEG FETS FABRICATED FROM MO-CVD WAFERS
[J].
TAKANASHI, Y
论文数:
0
引用数:
0
h-index:
0
TAKANASHI, Y
;
KOBAYASHI, N
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, N
.
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(03)
:154
-156
←
1
2
→
共 11 条
[1]
LOW-RESISTANCE OHMIC CONTACTS TO PARA-TYPE GAAS USING ZN/PD/AU METALLIZATION
[J].
BROOKS, RC
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
BROOKS, RC
;
CHEN, CL
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
CHEN, CL
;
CHU, A
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
CHU, A
;
MAHONEY, LJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MAHONEY, LJ
;
MAVROIDES, JG
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MAVROIDES, JG
;
MANFRA, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MANFRA, MJ
;
FINN, MC
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
FINN, MC
.
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(10)
:525
-527
[2]
LOW RESISTANCE PD/GE/AU AND GE/PD/AU OHMIC CONTACTS TO NORMAL-TYPE GAAS
[J].
CHEN, CL
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, Lexington, MA, USA, MIT, Lexington, MA, USA
CHEN, CL
;
MAHONEY, LJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, Lexington, MA, USA, MIT, Lexington, MA, USA
MAHONEY, LJ
;
FINN, MC
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, Lexington, MA, USA, MIT, Lexington, MA, USA
FINN, MC
;
BROOKS, RC
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, Lexington, MA, USA, MIT, Lexington, MA, USA
BROOKS, RC
;
CHU, A
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, Lexington, MA, USA, MIT, Lexington, MA, USA
CHU, A
;
MAVROIDES, JG
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, Lexington, MA, USA, MIT, Lexington, MA, USA
MAVROIDES, JG
.
APPLIED PHYSICS LETTERS,
1986,
48
(08)
:535
-537
[3]
MECHANISM OF SIMS MATRIX EFFECT
[J].
DELINE, VR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT CHEM,URBANA,IL 61801
DELINE, VR
;
KATZ, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT CHEM,URBANA,IL 61801
KATZ, W
;
EVANS, CA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT CHEM,URBANA,IL 61801
EVANS, CA
.
APPLIED PHYSICS LETTERS,
1978,
33
(09)
:832
-835
[4]
COMPREHENSIVE STUDY OF AUMN P-TYPE OHMIC CONTACT FOR GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS
[J].
DUBONCHEVALLIER, C
论文数:
0
引用数:
0
h-index:
0
DUBONCHEVALLIER, C
;
GAUNEAU, M
论文数:
0
引用数:
0
h-index:
0
GAUNEAU, M
;
BRESSE, JF
论文数:
0
引用数:
0
h-index:
0
BRESSE, JF
;
IZRAEL, A
论文数:
0
引用数:
0
h-index:
0
IZRAEL, A
;
ANKRI, D
论文数:
0
引用数:
0
h-index:
0
ANKRI, D
.
JOURNAL OF APPLIED PHYSICS,
1986,
59
(11)
:3783
-3786
[5]
PD-GE CONTACTS TO N-TYPE GAAS
[J].
GRINOLDS, HR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
GRINOLDS, HR
;
ROBINSON, GY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
ROBINSON, GY
.
SOLID-STATE ELECTRONICS,
1980,
23
(09)
:973
-&
[6]
LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159
[7]
CONTACT REACTIONS IN PD-GAAS JUNCTIONS
[J].
OLOWOLAFE, JO
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
OLOWOLAFE, JO
;
HO, PS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
HO, PS
;
HOVEL, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
HOVEL, HJ
;
LEWIS, JE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
LEWIS, JE
;
WOODALL, JM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
WOODALL, JM
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(02)
:955
-962
[8]
SINTERED OHMIC CONTACTS TO N-TYPE AND P-TYPE GAAS
[J].
SINHA, AK
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SINHA, AK
;
SMITH, TE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SMITH, TE
;
LEVINSTEIN, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LEVINSTEIN, HJ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
ED22
(05)
:218
-224
[9]
NOISE-FIGURE CHARACTERISTICS OF 1/2-MU-M GATE SINGLE-HETEROJUNCTION HIGH-ELECTRON-MOBILITY FETS AT 35 GHZ
[J].
SOVERO, EA
论文数:
0
引用数:
0
h-index:
0
SOVERO, EA
;
GUPTA, AK
论文数:
0
引用数:
0
h-index:
0
GUPTA, AK
;
HIGGINS, JA
论文数:
0
引用数:
0
h-index:
0
HIGGINS, JA
.
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(03)
:179
-181
[10]
AIGAAS/GAAS 2-DEG FETS FABRICATED FROM MO-CVD WAFERS
[J].
TAKANASHI, Y
论文数:
0
引用数:
0
h-index:
0
TAKANASHI, Y
;
KOBAYASHI, N
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, N
.
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(03)
:154
-156
←
1
2
→