OHMIC CONTACTS TO N-TYPE GAAS USING HIGH-TEMPERATURE RAPID THERMAL ANNEALING FOR SELF-ALIGNED PROCESSING

被引：8

作者：

CHEN, CL

MAHONEY, LJ

WOODHOUSE, JD

FINN, MC

NITISHIN, PM

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 17期

关键词：

D O I：

10.1063/1.97903

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1179 / 1181

页数：3

共 13 条

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[6] CHARACTERISTICS OF SUB-HALF-MICROMETRE-GATE SELF-ALIGNED GAAS-FET BY ION-IMPLANTATION [J].

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[8]

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