ATOM-PROBE STUDY OF THE EARLY STAGE OF SILICIDE FORMATION .1. W-SI SYSTEM

被引：35

作者：

NISHIKAWA, O

TSUNASHIMA, Y

NOMURA, E

HORIE, S

WADA, M

SHIBATA, M

YOSHIMURA, T

UEMORI, R

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 01期

关键词：

D O I：

10.1116/1.582506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TUNGSTEN SILICON ALLOYS

引用

收藏

页码：6 / 9

页数：4

相关论文

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