A COMPARISON OF RADIATION-DAMAGE IN LINEAR ICS FROM CO-60 GAMMA-RAYS AND 2.2 MEV ELECTRONS

被引：9

作者：

GAUTHIER, MK

NICHOLS, DK

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/TNS.1983.4333107

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4192 / 4196

页数：5

共 8 条

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[2]

GAUTHIER MK, 1983, JPL SEP

[3]

GAUTHIER MK, 1981, IEEE T NUC SCI, V28

[4] A COMPARISON OF RADIATION-DAMAGE IN TRANSISTORS FROM CO-60 GAMMA-RAYS AND 2.2 MEV ELECTRONS [J].

NICHOLS, DK ;

PRICE, WE ;

GAUTHIER, MK .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1970-1974

[5]

PRICE WE, 1981, JPL8166 PUBL, V2

[6]

PRICE WE, 1981, JPL8166 PUBL, V1

[7]

STANLEY AG, 1977, IEEE T NUC SCI, V24

[8] RADIATION EFFECTS ON MOS DEVICES - DOSIMETRY, ANNEALING, IRRADIATION SEQUENCE, AND SOURCES [J].

STASSINOPOULOS, EG ;

BRUCKER, GJ ;

VANGUNTEN, O ;

KNUDSON, AR ;

JORDAN, TM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (03) :1880-1884

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