LOW RESISTIVITY THIN-FILM REFRACTORY SILICIDES GROWN IN ULTRAHIG VACUUM AT LOW-TEMPERATURE

被引：8

作者：

PANTEL, R

CAMPIDELLI, Y

DAVITAYA, FA

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 10期

关键词：

D O I：

10.1149/1.2115309

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2426 / 2430

页数：5

共 14 条

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[9] REACTION-KINETICS OF TUNGSTEN THIN-FILMS ON SILICON (100) SURFACES [J].

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