DEFECT REACTIONS ON THE PHOSPHORUS SUBLATTICE IN LOW-TEMPERATURE ELECTRON-IRRADIATED INP

被引：10

作者：

SIBILLE, A ^{[1
]}

SUSKI, J ^{[1
]}

机构：

[1] UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS 05,FRANCE

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.31.5551

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5551 / 5553

页数：3

共 14 条

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[3]

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[6] DEFECT STATES IN ELECTRON BOMBARDED N-INP [J].

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[7] AN ANNEALING STUDY OF ELECTRON IRRADIATION-INDUCED DEFECTS IN GAAS [J].

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[8]

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[9] ENERGY AND ORIENTATION DEPENDENCE OF ELECTRON-IRRADIATION-INDUCED DEFECTS IN INP [J].

SIBILLE, A ;

SUSKI, J ;

LEROUX, G .

PHYSICAL REVIEW B, 1984, 30 (02) :1119-1121

[10] ELECTRON-IRRADIATION INDUCED DEEP LEVELS IN P-INP [J].

SIBILLE, A ;

BOURGOIN, JC .

APPLIED PHYSICS LETTERS, 1982, 41 (10) :956-958

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