ELECTRICAL-PROPERTIES OF CO-SPUTTERED TANTALUM SILICIDES

被引：3

作者：

DENIS, J ^{[1
]}

FERNANDEZ, M ^{[1
]}

GONZALEZ, JP ^{[1
]}

ALBELLA, JM ^{[1
]}

MARTINEZDUART, JM ^{[1
]}

机构：

[1] UNIV AUTONOMA MADRID,CONSEJO SUPERIOR INVESTIGAC CIENTIFICAS,INST FIS ESTADO SOLIDO,E-28049 MADRID,SPAIN

来源：

THIN SOLID FILMS | 1985年 / 125卷 / 3-4期

关键词：

D O I：

10.1016/0040-6090(85)90240-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：329 / 333

页数：5

共 7 条

[1]

Fraser D. B., 1983, VLSI technology, P347

[2]

HOFFMAN S, 1982, J TRACE MICROPROBE T, V1, P213

[3] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J].

MURARKA, SP ;

FRASER, DB ;

SINHA, AK ;

LEVINSTEIN, HJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1409-1417

[4] RESISTIVITIES OF THIN-FILM TRANSITION-METAL SILICIDES [J].

MURARKA, SP ;

READ, MH ;

DOHERTY, CJ ;

FRASER, DB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) :293-301

[5] SILICIDE FORMATION IN THIN COSPUTTERED (TANTALUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J].

MURARKA, SP ;

FRASER, DB .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1593-1598

[6]

MURARKA SP, 1981, 4TH P INT S SIL MAT, P551

[7] REFRACTORY-METAL SILICIDES FOR VLSI APPLICATIONS [J].

SINHA, AK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :778-785

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