IMPROVEMENT OF MULTIQUANTUM-BARRIER EFFECT BY LAYER-THICKNESS MODULATION

被引：13

作者：

FUJII, H ^{[1
]}

ENDO, K ^{[1
]}

HOTTA, H ^{[1
]}

机构：

[1] NEC CORP LTD,OPTOELECTR RES LABS,TSUKUBA 305,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 25期

关键词：

D O I：

10.1063/1.111246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a novel modulated-layer-thickness multiquantum-barrier (MQB) structure, or chirped MQB. The chirped MQB has a larger potential increase (240 meV) against overflowing electrons than the uniform MQB by almost 100 meV It also has a broader optimum well thickness width of 1.9 mm while the uniform MQB has only 0.5 nm optimum width. This indicates that the chirped MQB would work more effectively even under the layer thickness fluctuation caused by step bunching, etc.

引用

页码：3479 / 3481

页数：3

共 7 条

[1] ROOM-TEMPERATURE CW OPERATION OF 610NM BAND ALGALNP STRAINED MULTIQUANTUM WELL LASER-DIODES WITH MULTIQUANTUM BARRIER [J].