IMPURITY CONDUCTION IN DUFFUSED GERMANIUM AND SILICON LAYERS

被引：1

作者：

BLAKEMORE, JS

OLSON, RO

HERDER, TH

机构：

来源：

SOLID-STATE ELECTRONICS | 1966年 / 9卷 / 07期

关键词：

D O I：

10.1016/0038-1101(66)90094-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：673 / +

页数：1

共 13 条

[1] DESIGN OF GERMANIUM FOR THERMOMETRIC APPLICATIONS [J].

BLAKEMORE, JS .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1962, 33 (01) :106-&

[2] THE AVERAGE CONDUCTIVITY OF DIFFUSED LAYERS IN SEMICONDUCTORS [J].

BUSEN, KM ;

SHIRN, GA .

SOLID-STATE ELECTRONICS, 1964, 7 (01) :49-+

[3]

CRANK J, 1957, MATHEMATICS DIFFUSIO

[4] RELATION BETWEEN SURFACE CONCENTRATION AND AVERAGE CONDUCTIVITY IN DIFFUSED LAYERS IN GERMANIUM [J].

CUTTRISS, DB .

BELL SYSTEM TECHNICAL JOURNAL, 1961, 40 (02) :509-+

[5] DIFFUSION OF IMPURITIES IN GERMANIUM [J].

DUNLAP, WC .

PHYSICAL REVIEW, 1954, 94 (06) :1531-1540

[6] COPPER AS AN ACCEPTOR ELEMENT IN GERMANIUM [J].

FULLER, CS ;

STRUTHERS, JD .

PHYSICAL REVIEW, 1952, 87 (03) :526-527

[7] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].

FULLER, CS ;

DITZENBERGER, JA .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) :544-553

[8] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[9] GERMANIUM RESISTANCE THERMOMETERS SUITABLE FOR LOW-TEMPERATURE CALORIMETRY [J].

KUNZLER, JE ;

GEBALLE, TH ;

HULL, GW .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1957, 28 (02) :96-98

[10] LOW TEMPERATURE IMPURITY CONDUCTION IN SILICON [J].

LONGO, TA ;

RAY, RK ;

LARKHOROVITZ, K .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :259-263

← 1 2 →