ALTERNATIVE WAY FOR NUMERICAL STEADY-STATE ANALYSIS OF FORWARD-BIASED P-N-JUNCTION DEVICES

被引：3

作者：

LETURCQ, P

YAGUE, AM

机构：

[1] INST NATL SCI APPL TOULOUSE, AVE RANGUEIL, 31400 TOULOUSE, FRANCE

[2] CNRS, LAB AUTOMATIQUE & ANAL SYST, 7 AVE COLONEL ROCHE, 31400 TOULOUSE, FRANCE

来源：

ELECTRONICS LETTERS | 1975年 / 11卷 / 19期

关键词：

D O I：

10.1049/el:19750357

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：465 / 466

页数：2

相关论文

共 7 条

[1] CHOO SC, 1972, IEEE T ELECTRON DEV, VED19, P954
[2] AN ACCURATE NUMERICAL STEADY-STATE 1-DIMENSIONAL SOLUTION OF P-N JUNCTION
DEMARI, A
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (01) : 33 - +
[3] GOLD AS A RECOMBINATION CENTRE IN SILICON
FAIRFIELD, JM
GOKHALE, BV
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 685 - +
[4] SELF-CONSISTENT ITERATIVE SCHEME FOR 1-DIMENSIONAL STEADY STATE TRANSISTOR CALCULATIONS
GUMMEL, HK
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (10) : 455 - &
[5] P+IN+ SILICON DIODES AT HIGH FORWARD CURRENT DENSITIES
HOWARD, NR
JOHNSON, GW
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 275 - &
[6] SAH CT, 1967, PR INST ELECTR ELECT, V55, P654
[7] ITERATIVE SCHEME FOR COMPUTER SIMULATION OF SEMICONDUCTOR DEVICES
SEIDMAN, TI
CHOO, SC
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (11) : 1229 - &