INTERSUBBAND SPECTROSCOPY AND VALLEY DEGENERACY OF SI(110) AND SI(111) N-TYPE INVERSION-LAYERS

[1] ABSORPTION OF INFRARED RADIATION BY ELECTRONS IN SEMICONDUCTOR INVERSION LAYERS [J]. SOLID STATE COMMUNICATIONS, 1976, 20 (04) : 425 - 428

[2] OPTICAL-ABSORPTION IN SURFACE SPACE-CHARGE LAYERS OF ANISOTROPIC AND TILTED VALLEY SYSTEMS [J]. SOLID STATE COMMUNICATIONS, 1977, 23 (10) : 751 - 754

[3] INTER-SUBBAND OPTICAL-ABSORPTION IN SPACE-CHARGE LAYERS ON SEMICONDUCTOR SURFACES [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1977, 26 (03): : 263 - 272

[4] ANDO T, 1976, PHYS REV B, V13, P3466

[5] STABILITY OF THE 6-VALLEY STATE OF THE SI(111) N-TYPE INVERSION LAYER [J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5390 - 5393

[6] INTERACTION-INDUCED TRANSITION AT LOW-DENSITIES IN SILICON INVERSION LAYER [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (20) : 1529 - 1532

[7] EXCHANGE-CORRELATION EFFECTS IN SILICON (111) INVERSION-LAYERS - STRAIN-ENHANCED VALLEY-OCCUPANCY PHASE-TRANSITION [J]. PHYSICAL REVIEW B, 1981, 23 (04): : 1839 - 1842

[8] INTERFACE EM MODES OF A SURFACE QUANTIZED PLASMA-LAYER ON A SEMICONDUCTOR SURFACE [J]. SURFACE SCIENCE, 1976, 58 (01) : 263 - 265

[9] Cole T., 1980, Journal of the Physical Society of Japan, V49, P959

[10] COLE T, 1982, 4TH P INT C EL PROP, P41

[1] ABSORPTION OF INFRARED RADIATION BY ELECTRONS IN SEMICONDUCTOR INVERSION LAYERS [J]. SOLID STATE COMMUNICATIONS, 1976, 20 (04) : 425 - 428

[2] OPTICAL-ABSORPTION IN SURFACE SPACE-CHARGE LAYERS OF ANISOTROPIC AND TILTED VALLEY SYSTEMS [J]. SOLID STATE COMMUNICATIONS, 1977, 23 (10) : 751 - 754

[3] INTER-SUBBAND OPTICAL-ABSORPTION IN SPACE-CHARGE LAYERS ON SEMICONDUCTOR SURFACES [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1977, 26 (03): : 263 - 272

[4] ANDO T, 1976, PHYS REV B, V13, P3466

[5] STABILITY OF THE 6-VALLEY STATE OF THE SI(111) N-TYPE INVERSION LAYER [J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5390 - 5393

[6] INTERACTION-INDUCED TRANSITION AT LOW-DENSITIES IN SILICON INVERSION LAYER [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (20) : 1529 - 1532

[7] EXCHANGE-CORRELATION EFFECTS IN SILICON (111) INVERSION-LAYERS - STRAIN-ENHANCED VALLEY-OCCUPANCY PHASE-TRANSITION [J]. PHYSICAL REVIEW B, 1981, 23 (04): : 1839 - 1842

[8] INTERFACE EM MODES OF A SURFACE QUANTIZED PLASMA-LAYER ON A SEMICONDUCTOR SURFACE [J]. SURFACE SCIENCE, 1976, 58 (01) : 263 - 265

[9] Cole T., 1980, Journal of the Physical Society of Japan, V49, P959

[10] COLE T, 1982, 4TH P INT C EL PROP, P41