A 64K SRAM WITH HIGH IMMUNITY FROM HEAVY-ION INDUCED LATCH-UP

被引：3

作者：

SHIONO, N ^{[1
]}

SAKAGAWA, Y ^{[1
]}

MATSUMOTO, T ^{[1
]}

AKASAKA, Y ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,LSI RES & DEV LAB,ITAMI,HYOGO 664,JAPAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 01期

关键词：

D O I：

10.1109/EDL.1986.26278

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：20 / 22

页数：3

共 7 条

[1]

ANAMI K, 1983, 1983 S VLSI, P12

[2] HEAVY ION-INDUCED SINGLE EVENT UPSETS OF MICROCIRCUITS - A SUMMARY OF THE AEROSPACE CORPORATION TEST DATA [J].

KOGA, R ;

KOLASINSKI, WA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1190-1195

[3]

Littmark U., 1980, HDB RANGE DISTRIBUTI, V6

[4] COMPARISON OF ANALYTICAL MODELS AND EXPERIMENTAL RESULTS FOR SINGLE EVENT UPSET IN CMOS SRAMS [J].

MNICH, TM ;

DIEHL, SE ;

SHAFER, BD ;

KOGA, R ;

KOLASINSKI, WA ;

OCHOA, A .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4620-4623

[5]

NORDSTROM TV, 1983, 5TH P IEEE CUST INT, P43

[6] LATCHUP IN CMOS DEVICES FROM HEAVY-IONS [J].

SOLIMAN, K ;

NICHOLS, DK .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4514-4519

[7] A DIVIDED WORD-LINE STRUCTURE IN THE STATIC RAM AND ITS APPLICATION TO A 64K FULL CMOS RAM [J].

YOSHIMOTO, M ;

ANAMI, K ;

SHINOHARA, H ;

YOSHIHARA, T ;

TAKAGI, H ;

NAGAO, S ;

KAYANO, S ;

NAKANO, T .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (05) :479-485

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