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INGAASP ELECTROABSORPTION MODULATOR FOR HIGH-BIT-RATE EDFA SYSTEM

被引：40
作者：
SUZUKI, M
TANAKA, H
MATSUSHIMA, Y
机构：
[1] KDD R&D Laboratories
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 06期
关键词：
D O I：
10.1109/68.141976
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A total performance of an InGaAsP electroabsorption modulator was characterized. Low-driving voltage of 1.2-2.7 V, low fiber-to-fiber insertion loss of 8.4-7.8 dB, and small alpha-value of 0.1-0.4 were obtained in 40 nm wide wavelength range from 1.53 to 1.57-mu-m. Static and dynamic modulation characteristics showed small dependence on the polarization and the power level of input light. Successful applications of a packaged EA modulator to ultralong distance Er-doped fiber amplifier systems were confirmed by 16000-4550 km transmission experiments at 2.5-10 Gb/s.
引用
收藏
页码：586 / 588
页数：3
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