THE NEGATIVE DIFFERENTIAL RESISTANCE CHARACTERISTICS OF DOUBLE-BARRIER INTERBAND TUNNELING STRUCTURES

被引：6

作者：

HOUNG, MP

WANG, YH

SHEN, CL

机构：

[1] Department of Electrical Engineering, National Cheng-Kung University, Tainan

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 08期

关键词：

D O I：

10.1063/1.349053

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The tunneling mechanism responsible for negative differential resistance in GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling structures was studied systematically. It was found that the peak current results from resonant interband tunneling and that the spacers make a significant contribution to the valley current. Furthermore, the optimal thicknesses for the GaSb well and AlSb barriers were predicted to be 65 angstrom and 10 angstrom, respectively, which agrees fairly well with experimental results. Our theoretical results give some useful design principles for this type of interband tunneling device.

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页码：4640 / 4642

页数：3

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