共 42 条
[1]
RESONANT ACCEPTOR LEVEL IN ZERO-GAP SEMICONDUCTORS - SINGLE AND MULTIPLE-SCATTERING EFFECTS
[J].
PHYSICA STATUS SOLIDI B-BASIC RESEARCH,
1977, 80 (02)
:641-650
[2]
IONIZED-IMPURITY-LIMITED MOBILITY OF ALPHA-SN IN RANDOM-PHASE APPROXIMATION
[J].
PHYSICAL REVIEW B,
1970, 1 (12)
:4568-&
[3]
EFFECT OF P3/2 INTRABAND POLARIZATION ON MOBILITY OF ZERO-GAP SEMICONDUCTORS
[J].
PHYSICAL REVIEW B-SOLID STATE,
1971, 4 (02)
:664-+
[5]
DOLGOV EL, 1978, FIZ TVERD TELA+, V20, P1633
[6]
IMPURITY BAND IN HG1-XCDXTE ALLOYS
[J].
PHYSICA STATUS SOLIDI B-BASIC RESEARCH,
1979, 96 (01)
:129-136
[7]
THE MOBILITY OF ELECTRONS AND HOLES IN HGTE IN THE TEMPERATURE-RANGE OF INTRINSIC CONDUCTION
[J].
PHYSICA STATUS SOLIDI B-BASIC RESEARCH,
1980, 100 (02)
:379-387
[8]
IMPURITY BAND CONDUCTION IN HGTE .2. THEORETICAL-ANALYSIS
[J].
PHYSICA STATUS SOLIDI B-BASIC RESEARCH,
1983, 118 (01)
:319-326
[9]
IMPURITY BAND CONDUCTION IN HGTE .1. EXPERIMENTAL-DATA
[J].
PHYSICA STATUS SOLIDI B-BASIC RESEARCH,
1983, 117 (02)
:531-540
[10]
EHRENREICH H, 1982, J VAC SCI TECHNOL, V21, P133, DOI 10.1116/1.571695