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IMPURITY BAND IN HG1-XCDXTE ALLOYS

被引：5
作者：
DUGAEV, VK
PETROV, PP
机构：
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 96卷 / 01期
关键词：
D O I：
10.1002/pssb.2220960110
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The problem of the acceptor impurity band formation in the Hg1−xCdxTe alloy with ϵg≦ 0.3 eV is discussed. Within the coherent potential approximation the density of states as a function of impurity concentration and alloy composition is calculated. The dependence of the impurity band centre location on alloy composition is obtained. The dependence of the acceptor impurity activation energy on the impurity concentration is determined. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA
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页码：129 / 136
页数：8
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