EFFECTS OF N-H2 DOSES IN ION-IMPLANTED BUBBLE MEMORY TEST CHIPS

被引:8
作者
NELSON, TJ
BALLINTINE, JE
REITH, LA
ROMAN, BJ
SLUSKY, SEG
WOLFE, R
机构
关键词
D O I
10.1109/TMAG.1982.1062015
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:1358 / 1360
页数:3
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