STRUCTURE, OPTICAL AND ELECTRICAL PROPERTIES OF SILICON-RICH SILICON-NITRIDE FILMS

被引：17

作者：

VOSKOBOYNIKOV, VV ^{[1
]}

GRITSENKO, VA ^{[1
]}

DIKOVSKAYA, ND ^{[1
]}

ZAITSEV, BN ^{[1
]}

MOGILNICOV, KP ^{[1
]}

OSADCHII, VM ^{[1
]}

SINITSA, SP ^{[1
]}

EDELMAN, FL ^{[1
]}

机构：

[1] ACAD SCI USSR,SEMICOND PHYS INST,NOVOSIBIRSK,USSR

来源：

THIN SOLID FILMS | 1976年 / 32卷 / 02期

关键词：

D O I：

10.1016/0040-6090(76)90327-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：339 / 342

页数：4

共 10 条

[1]

ANDRIEVSKII AI, 1968, UKR FIZ ZH, V13, P1595

[2] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J].

BRODSKY, MH ;

TITLE, RS .

PHYSICAL REVIEW LETTERS, 1969, 23 (11) :581-&

[3] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION [J].

BROWN, GA ;

ROBINETT.WC ;

CARLSON, HG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) :948-&

[4]

COLEMAN VM, 1968, PHYS STATUS SOLIDI, V25, P241

[5] POOLE-FRENKEL CONDUCTION IN AMORPHOUS SOLIDS [J].

HILL, RM .

PHILOSOPHICAL MAGAZINE, 1971, 23 (181) :59-&

[6]

Nabitovich I. D., 1967, KRISTALLOGRAFIYA, V12, P584

[7]

NEUMAN RA, 1967, IEEE T NUCL SCI, V5, P293

[8]

STETSIV YI, 1975, FIZ TVERD TELA+, V17, P118

[9] PROPERTIES OF VAPOR-DEPOSITED SILICON-NITRIDE FILMS WITH VARYING EXCESS SI CONTENT [J].

TANABASHI, K ;

KOBAYASHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (05) :641-646

[10]

Wallmark J. T., 1969, RCA Review, V30, P335

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