NEW GROOVED-GATE MOSFET WITH DRAIN SEPARATED FROM CHANNEL IMPLANTED REGION (DSC)

被引：16

作者：

TAKEDA, E

KUME, H

ASAI, S

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/T-ED.1983.21189

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：681 / 686

页数：6

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