SYNTHESIS OF HETEROEPITAXIAL SI/COSI2/SI STRUCTURES BY CO IMPLANTATION INTO SI

[1] BULLELIEUWMA CWT, 1987, I PHYS C SER, V87, P541

[2] CAMPISI GJ, 1986, MATER RES SOC S P, V54, P747

[3] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[4] HEMMENT PLF, 1986, MATERIALS RESEARCH S, V53, P207

[5] NAVAMAR F, 1984, MATER RES SOC S P, V27, P341

[6] FABRICATION OF BURIED LAYERS OF SIO2 AND SI3N4 USING ION-BEAM SYNTHESIS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 269 - 278

[7] SANCHEZ FH, 1986, MATERIALS RES SOC S, V51, P439

[8] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J]. PHYSICAL REVIEW, 1969, 184 (02): : 383 - +

[9] MESOTAXY - SINGLE-CRYSTAL GROWTH OF BURIED COSI2 LAYERS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (02) : 95 - 97

[1] BULLELIEUWMA CWT, 1987, I PHYS C SER, V87, P541

[2] CAMPISI GJ, 1986, MATER RES SOC S P, V54, P747

[3] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[4] HEMMENT PLF, 1986, MATERIALS RESEARCH S, V53, P207

[5] NAVAMAR F, 1984, MATER RES SOC S P, V27, P341

[6] FABRICATION OF BURIED LAYERS OF SIO2 AND SI3N4 USING ION-BEAM SYNTHESIS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 269 - 278

[7] SANCHEZ FH, 1986, MATERIALS RES SOC S, V51, P439

[8] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J]. PHYSICAL REVIEW, 1969, 184 (02): : 383 - +

[9] MESOTAXY - SINGLE-CRYSTAL GROWTH OF BURIED COSI2 LAYERS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (02) : 95 - 97