LIGHTLY DOPED DRAIN TRANSISTORS FOR ADVANCED VLSI CIRCUITS

被引：9

作者：

BAGLEE, DA

DUVVURY, C

SMAYLING, MC

DUANE, MP

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 05期

关键词：

D O I：

10.1109/T-ED.1985.22045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：896 / 902

页数：7

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